Carrier transport and recombination in p-doped and intrinsic 1.3 m InAs/GaAs quantum-dot lasers

The radiative and nonradiative components of the threshold current in 1.3 m, p-doped and undoped quantum-dot semiconductor lasers were studied between 20 and 370 K. The complex behavior can be explained by simply assuming that the radiative recombination and nonradiative Auger recombination rates are strongly modified by thermal redistribution of carriers between the dots. The large differences between the devices arise due to the trapped holes in the p-doped devices. These both greatly increase Auger recombination involving hole excitation at low temperatures and decrease electron thermal escape due to their Coulombic attraction. The model explains the high T0 values observed near room temperature. © 2005 American Institute of Physics. DOI: 10.1063/1.2135204